SiCウェハ製造に関する最近の動向(特集 最新のパワー半導体技術とその応用--シリコンとワイドバンドギャップ半導体)

• 資料種別: 記事
• タイトル: SiCウェハ製造に関する最近の動向
• 著者・編者: 藤本 辰雄
• シリーズタイトル: 特集 最新のパワー半導体技術とその応用--シリコンとワイドバンドギャップ半導体
• 著者標目: 藤本 辰雄
• 並列タイトル等: Recent development on the production technology of silicon carbide wafers
• タイトル（掲載誌）: 電気学会論文誌. C, 電子・情報・システム部門誌 = IEEJ transactions on electronics, information and systems
• 巻号年月日等（掲載誌）: 130(6) 2010.6
• 掲載巻: 130
• 掲載号: 6
• 掲載ページ: 917～919
• 掲載年月日（W3CDTF）: 2010-06
• ISSN（掲載誌）: 0385-4221
• ISSN-L（掲載誌）: 0385-4221
• 出版事項（掲載誌）: 東京 : 電気学会
• 出版地（国名コード）: JP
• 本文の言語コード: jpn
• 件名標目: SiC単結晶ウェハ; 改良レーリー法; マイクロパイプ欠陥; 欠陥制御; 基底面転位; 積層欠陥; SiC single crystal wafer; Modified Lely method; Micropipe defect; Defect control; Basal plane dislocation; Stacking fault
• NDLC: ZN31
• 対象利用者: 一般
• 所蔵機関: 国立国会図書館
• 請求記号: Z16-795
• 連携機関・データベース: 国立国会図書館 : 国立国会図書館雑誌記事索引; https://ndlsearch.ndl.go.jp
• 書誌ID（NDLBibID）: 10693953; http://id.ndl.go.jp/bib/10693953
• 整理区分コード: 632

• 要約等: Recent development and current status on the growth technology of silicon carbide (SiC) single crystals, long-known as a promising wide bandgap semiconductor material applicable to electronic devices of higher performance, are briefly described. The micropipe defect density, which is known to cause fatal problems in SiC devices, has been reduced significantly, and up to date no longer cited as the most harmful defect for device applications. In addition, such technological advance has led to the increase of the crystal diameters up to 100mm, evoking acceleration of SiC device productions.
• DOI: 10.1541/ieejeiss.130.917
• オンライン閲覧公開範囲: インターネット公開
• 連携機関・データベース: 科学技術振興機構 : J-STAGE; http://www.jstage.jst.go.jp

• 要約等: Recent development and current status on the growth technology of silicon carbide (SiC) single crystals, long-known as a promising wide bandgap semiconductor material applicable to electronic devices of higher performance, are briefly described. The micropipe defect density, which is known to cause fatal problems in SiC devices, has been reduced significantly, and up to date no longer cited as the most harmful defect for device applications. In addition, such technological advance has led to the increase of the crystal diameters up to 100mm, evoking acceleration of SiC device productions.
• DOI: 10.1541/ieejeiss.130.917; https://doi.org/10.1541/ieejeiss.130.917
• 関連情報（URI）: http://id.ndl.go.jp/bib/10693953; https://ndlsearch.ndl.go.jp/books/R000000004-I10693953; http://www.jstage.jst.go.jp/article/ieejeiss/130/6/130_6_917/_pdf
• 参照: Sublimation growth of 6H- and 4H-SiC single crystals in the [11¯0 0] and [1 12¯0] directions; https://cir.nii.ac.jp/crid/1360011146367220992; Degradation of hexagonal silicon-carbide-based bipolar devices; https://cir.nii.ac.jp/crid/1360574094452872704; SiC Crystal Growth by HTCVD; https://cir.nii.ac.jp/crid/1361699995384876544; Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities; https://cir.nii.ac.jp/crid/1362544418386607488; Investigation of growth processes of ingots of silicon carbide single crystals; https://cir.nii.ac.jp/crid/1362544419012252928; Ultrahigh-quality silicon carbide single crystals; https://cir.nii.ac.jp/crid/1362544421053216128; Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions; https://cir.nii.ac.jp/crid/1362825894998460032; Chemomechanical Polishing of Silicon Carbide; https://cir.nii.ac.jp/crid/1363107368291391616; Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes; https://cir.nii.ac.jp/crid/1363107370103151104; Evolution of thermoelastic strain and dislocation density during sublimation growth of silicon carbide; https://cir.nii.ac.jp/crid/1363670318579903872; Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique; https://cir.nii.ac.jp/crid/1363670319176532992
• 連携機関・データベース: 国立情報学研究所 : CiNii Research; https://cir.nii.ac.jp/
• 提供元機関・データベース: Japan Link Center; https://japanlinkcenter.org/top; 雑誌記事索引データベース; https://ndlsearch.ndl.go.jp; Crossref; https://www.crossref.org; CiNii Articles
• 書誌ID（NDLBibID）: 10693953; http://id.ndl.go.jp/bib/10693953
• NII論文ID: 10026382585