高温アニールによる4H-SiCエッチング形状変形の異方性(特集 最新のパワー半導体技術とその応用--シリコンとワイドバンドギャップ半導体)

• 資料種別: 記事
• タイトル: 高温アニールによる4H-SiCエッチング形状変形の異方性
• 著者・編者: 河田 泰之; 俵 武志; 中村 俊一 他
• シリーズタイトル: 特集 最新のパワー半導体技術とその応用--シリコンとワイドバンドギャップ半導体
• 著者標目: 河田 泰之; 俵 武志; 中村 俊一
• 並列タイトル等: Anisotropic transformation of 4H-SiC etching shapes by high temperature annealing
• タイトル（掲載誌）: 電気学会論文誌. C, 電子・情報・システム部門誌 = IEEJ transactions on electronics, information and systems
• 巻号年月日等（掲載誌）: 130(6) 2010.6
• 掲載巻: 130
• 掲載号: 6
• 掲載ページ: 920～923
• 掲載年月日（W3CDTF）: 2010-06
• ISSN（掲載誌）: 0385-4221
• ISSN-L（掲載誌）: 0385-4221
• 出版事項（掲載誌）: 東京 : 電気学会
• 出版地（国名コード）: JP
• 本文の言語コード: jpn
• 件名標目: 4H-SiC; ドライエッチング; 高温アニール; 変形; dry etching; high-temperature annealing; transformation
• NDLC: ZN31
• 対象利用者: 一般
• 所蔵機関: 国立国会図書館
• 請求記号: Z16-795
• 連携機関・データベース: 国立国会図書館 : 国立国会図書館雑誌記事索引; https://ndlsearch.ndl.go.jp
• 書誌ID（NDLBibID）: 10693964; http://id.ndl.go.jp/bib/10693964
• 整理区分コード: 632

• 要約等: We investigated transformation of 4H-SiC etching shapes by high temperature annealing. Although the etching mask was circular, the etched shape resulted in a hexagon, dodecagon, or octadecagon, depending on the etching area size. A hexagon was transformed into a dodecagon along with the high temperature annealing, and a dodecagon was transformed into an octadecagon.Hexagon as well as dodecagon designed with different edge directions undergo different transformation by the annealing, owing to common preference of crystallographic faces. An edge corresponding to one of the {1-10x} faces appears as a straight line and seems most preferred. Edges corresponding to the {11-2x} faces also appear in a curvy feature, suggesting to be second most preferred. Faceted structures (bunching) were observed clearly on the {1-10x} faces but faintly on the {11-2x} faces. Therefore, it is necessary to design the shapes and their directions in an actual device in consideration of the transformation by annealing.
• DOI: 10.1541/ieejeiss.130.920
• オンライン閲覧公開範囲: インターネット公開
• 連携機関・データベース: 科学技術振興機構 : J-STAGE; http://www.jstage.jst.go.jp

• 要約等: We investigated transformation of 4H-SiC etching shapes by high temperature annealing. Although the etching mask was circular, the etched shape resulted in a hexagon, dodecagon, or octadecagon, depending on the etching area size. A hexagon was transformed into a dodecagon along with the high temperature annealing, and a dodecagon was transformed into an octadecagon.Hexagon as well as dodecagon designed with different edge directions undergo different transformation by the annealing, owing to common preference of crystallographic faces. An edge corresponding to one of the {1-10x} faces appears as a straight line and seems most preferred. Edges corresponding to the {11-2x} faces also appear in a curvy feature, suggesting to be second most preferred. Faceted structures (bunching) were observed clearly on the {1-10x} faces but faintly on the {11-2x} faces. Therefore, it is necessary to design the shapes and their directions in an actual device in consideration of the transformation by annealing.
• DOI: 10.1541/ieejeiss.130.920; https://doi.org/10.1541/ieejeiss.130.920
• 関連情報（URI）: http://id.ndl.go.jp/bib/10693964; https://ndlsearch.ndl.go.jp/books/R000000004-I10693964; http://www.jstage.jst.go.jp/article/ieejeiss/130/6/130_6_920/_pdf
• 参照: Theory of Semiconductor Superjunction Devices.; https://cir.nii.ac.jp/crid/1390282681225276672; Shape control and roughness reduction of SiC trenches by high-temperature annealing; https://cir.nii.ac.jp/crid/1520853832991357952; Shape transformation of 4H-SiC microtrenches by hydrogen annealing; https://cir.nii.ac.jp/crid/1520853833928170624
• 連携機関・データベース: 国立情報学研究所 : CiNii Research; https://cir.nii.ac.jp/
• 提供元機関・データベース: Japan Link Center; https://japanlinkcenter.org/top; 雑誌記事索引データベース; https://ndlsearch.ndl.go.jp; Crossref; https://www.crossref.org; CiNii Articles
• 書誌ID（NDLBibID）: 10693964; http://id.ndl.go.jp/bib/10693964
• NII論文ID: 10026382599