Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model

• 資料種別: 記事
• タイトル: Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model
• 著者・編者: Masashi Uematsu; Hiroyuki Kageshima; Kenji Shiraishi
• 著者標目: Masashi Uematsu; Hiroyuki Kageshima; Kenji Shiraishi
• タイトル（掲載誌）: Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
• 巻号年月日等（掲載誌）: 40(9A) (通号 545) 2001.9
• 掲載巻: 40
• 掲載号: 9A
• 掲載通号: 545
• 掲載ページ: 5197～5200
• 掲載年月日（W3CDTF）: 2001-09
• ISSN（掲載誌）: 0021-4922
• ISSN-L（掲載誌）: 0021-4922
• 出版事項（掲載誌）: Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
• 出版地（国名コード）: JP
• 本文の言語コード: eng
• 件名標目: diffusion
• NDLC: ZM35
• 対象利用者: 一般
• コレクション（共通）: 障害者向け資料
• コレクション（障害者向け資料：レベル1）: テキストデータ
• コレクション（障害者向け資料：レベル2）: プレーンテキスト
• コレクション（個別）: 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌; https://dl.ndl.go.jp/collections/A00002
• オンライン閲覧公開範囲: 国立国会図書館内限定公開
• デジタル化資料送信: 図書館・個人送信対象外
• 遠隔複写可否（NDL）: 可
• 所蔵機関: 国立国会図書館
• 請求記号: Z53-A375
• 掲載誌（国立国会図書館永続的識別子）: info:ndljp/pid/11226614; https://dl.ndl.go.jp/pid/11226614
• 連携機関・データベース: 国立国会図書館 : 国立国会図書館雑誌記事索引; https://ndlsearch.ndl.go.jp
• 書誌ID（NDLBibID）: 5918656; http://id.ndl.go.jp/bib/5918656
• 整理区分コード: 632

• 要約等: Silicon oxidation of heavily phosphorus-doped substrates is simulated based on the interfacial silicon emission model. We assume that double negatively charged vacancies (V<FONT SIZE="-1"><SUP>2-</SUP></FONT>) from the substrates reduce the interfacial silicon emission, which governs the oxidation rate at the interface. The simulation is done by reducing the rate of Si-atom emission according to the concentration of V<FONT SIZE="-1"><SUP>2-</SUP></FONT> estimated from the carrier concentration of the substrates. In addition, the equilibrium concentration of oxygen in the oxide is increased with increasing P concentration to fit the experimental oxide thickness.
• DOI: 10.1143/jjap.40.5197; https://doi.org/10.1143/jjap.40.5197
• 関連情報（URI）: http://id.ndl.go.jp/bib/5918656; https://ndlsearch.ndl.go.jp/books/R000000004-I5918656; https://iopscience.iop.org/article/10.1143/JJAP.40.5197; https://iopscience.iop.org/article/10.1143/JJAP.40.5197/pdf
• 参照: Extension of silicon emission model to silicon pillar oxidation; https://cir.nii.ac.jp/crid/1360003449890725120; Reconsideration of Si pillar thermal oxidation mechanism; https://cir.nii.ac.jp/crid/1360003449891719680
• 参照: Simulation of wet oxidation of silicon based on the interfacial silicon emission model and comparison with dry oxidation; https://cir.nii.ac.jp/crid/1050001202646091136; Silicon Oxidation Studies: The Oxidation of Heavily B‐ and P‐Doped Single Crystal Silicon; https://cir.nii.ac.jp/crid/1360016866775838592; General Relationship for the Thermal Oxidation of Silicon; https://cir.nii.ac.jp/crid/1360574095304885504; Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels: I . Theory; https://cir.nii.ac.jp/crid/1361418518778762368; Characterization of Phosphorus Pile‐Up at the SiO2 / Si Interface; https://cir.nii.ac.jp/crid/1361699994777171584; Simulation of critical IC fabrication processes using advanced physical and numerical methods; https://cir.nii.ac.jp/crid/1361981470988676352; First-Principles Study of Oxide Growth on Si(100) Surfaces and at<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>SiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>/Si(100) Interfaces; https://cir.nii.ac.jp/crid/1363107369559011712; Thermal Oxidation of Heavily Phosphorus‐Doped Silicon; https://cir.nii.ac.jp/crid/1363107370952817408; Studies of Phosphorus Pile‐Up at the Si ‐ SiO2 Interface Using Auger Sputter Profiling; https://cir.nii.ac.jp/crid/1363388844886473088; Thermal Oxidation of Heavily Doped Silicon; https://cir.nii.ac.jp/crid/1363388845872948992; Point defects, diffusion processes, and swirl defect formation in silicon; https://cir.nii.ac.jp/crid/1363670319818918144; Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels: II . Comparison with Experiment and Discussion; https://cir.nii.ac.jp/crid/1363670320579556480; Dopant diffusion in silicon: A consistent view involving nonequilibrium defects; https://cir.nii.ac.jp/crid/1363951793927298176; Simulation of boron, phosphorus, and arsenic diffusion in silicon based on an integrated diffusion model, and the anomalous phosphorus diffusion mechanism; https://cir.nii.ac.jp/crid/1364233271122975872; Simulatioin of Clustering and Pile-Up during Post-Implantation Annealing of Phosphorus in Silicon; https://cir.nii.ac.jp/crid/1390001206249357056; Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model.; https://cir.nii.ac.jp/crid/1390001206253476352; Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission.; https://cir.nii.ac.jp/crid/1390282681228363904; Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model.; https://cir.nii.ac.jp/crid/1390282681228939776; Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model.; https://cir.nii.ac.jp/crid/1390282681230635904
• 連携機関・データベース: 国立情報学研究所 : CiNii Research; https://cir.nii.ac.jp/
• 提供元機関・データベース: Japan Link Center; https://japanlinkcenter.org/top; 雑誌記事索引データベース; https://ndlsearch.ndl.go.jp; Crossref; https://www.crossref.org; CiNii Articles
• 書誌ID（NDLBibID）: 5918656; http://id.ndl.go.jp/bib/5918656
• NII論文ID: 210000049942; 110004044505