Origin of RHEED Intensity Oscillation during Homoepitaxial Growth on Si(001)

• 資料種別: 文書・図像類
• タイトル: Origin of RHEED Intensity Oscillation during Homoepitaxial Growth on Si(001)
• 著者・編者: Kawamura, T.; Maksym, P.A.
• 著者標目: Kawamura, T.; Maksym, P.A.
• 出版年月日等: 2014
• 出版年（W3CDTF）: 2014
• タイトル（掲載誌）: Surface Science = Surface Science
• 巻号年月日等（掲載誌）: 630
• 掲載巻: 630
• 掲載ページ: 125-135
• 本文の言語コード: eng
• 件名標目: step density; MBE growth; RHEED intensity oscillation; Electron-solid diffraction; Si(001); wave function
• 対象利用者: 一般
• 一般注記: The origin of RHEED intensity oscillations or variations during growth is analysed by using RHEED intensity distributions calculated from wave functions inside and outside the crystal surface. When the growth proceeds in a layer by layer fashion and the observed intensity is near a diffraction peak, there are only two possible origins of the intensity variations. One is theinterference between waves diffracted by the top and the subsequent underlying layers, and the other is the disturbance of the RHEED electron waves by step edges. RHEED rocking curves are computed and the intensities of peaks in the curves are found to vary systematically when material is deposited on the surface. The mechanism of these variations is identified by computing RHEED intensity distributions. An approximate measure of the disturbance of the wave function by step edges is also introduced.
• DOI: 10.34429/00004699
• 一次資料へのリンクURL: https://yamanashi.repo.nii.ac.jp/?action=repository_action_common_download&item_id=4706&item_no=1&attribute_id=22&file_no=1
• オンライン閲覧公開範囲: 限定公開
• 連携機関・データベース: 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• 提供元機関・データベース: 山梨大学 : 山梨大学学術リポジトリ