並列タイトル等Measurement of carrier parameters of semiconductor analyzing transmission of helicon waves
一般注記Carrier properties of n-type InSb doped by tellurium at liquid nitrogen temperature have been investigated measuring the transmission of millimeter wave (119.3 GHz) through a sample placed along a magnetic field with intensity up to 4 T. Since the wavelength of the millimeter wave in the n-type InSb is generally shorter than in vacuum (1.26 mm), samples with thickness less than that 1 mm have been used in the experiments. In the n-type InSb, the millimeter wave injected with a linear polarization is converted into a helicon wave with a right-hand circular polarization. The helicon wave interacts with the electrons and given appropriate conditions electron cyclotron resonance can be observed. As the wave velocity depends on the electron density the latter can be obtained from the dispersion relation for the transmission through the sample. Using such technique the electron density and the effective mass in n-type InSb have been estimated.
一次資料へのリンクURLhttps://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=26825&item_no=1&attribute_id=22&file_no=1
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース(IRDB)(機関リポジトリ)