一般注記A 1.56 μm femtosecond fiber laser was used to excite p- and n-type InAs and InSb semiconductors at the reflection geometry. Results revealed that at this excitation wavelength, InAs still showed a much stronger THz emission that differs from previous studies. However, using permanent magnets and a Si lens coupler, significant enhancement of the THz wave was observed from InSb semiconductor as compared to InAs. The combination of the InSb emitter and the femtosecond fiber laser system provides a stable and compact THz system.
一次資料へのリンクURLhttps://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=27314&item_no=1&attribute_id=22&file_no=1
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース(IRDB)(機関リポジトリ)