タイトル(掲載誌)Physica Status Solidi (c)
一般注記The electrical properties of rare-earth-metal Schottky contacts to p-GaN were characterized with current-voltage (I-V) and capacitance- voltage (C-V) measurements for the first time. Three kinds of rare-earth-metal films of Dy, Er, and Gd, which have low-metal-work-function nature, were deposited on low-Mgdoped p-GaN. Linear regions of more than one and a half orders were seen in a forward semi-log I-V plot, and reverse break down voltages were as high as around 60 V for all samples. In the C-V characteristics, good linearity was obtained in a 1/C^2 plot for all samples. The carrier concentration was estimated to be about 5.5×10^16 cm^<-3>, which is a reasonable value of activation efficiency of 4.2%. The Schottky barrier heights of Dy, Er, and Gd contacts were 1.91, 2.38, and 2.16 eV from I-V, and 1.79, 1.78, and 1.70 eV from C-V, respectively. These values are as high as those of the transition metal contacts. These results tell us that Fermi level pinning is significantly strong for p-GaN surfaces with a conventional acid treatment.
一次資料へのリンクURLhttps://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22117&item_no=1&attribute_id=22&file_no=1
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース(IRDB)(機関リポジトリ)