Raman Scattering Characterization of Annealed GaN_xAs_<1-x> Layers

• 資料種別: 文書・図像類
• タイトル: Raman Scattering Characterization of Annealed GaN_xAs_<1-x> Layers
• 著者・編者: FURUHATA, Takashi; KITANO, Takeshi; MAGARA, Hiroyuki; MASUDA, Atsushi; TANAKA, So; MOTO, Akihiro; TAKAHASHI, Mitsuo; TANABE, Tatsuya; TAKAGISHI, Shigenori; YAMAMOTO, Akio; HASHIMOTO, Akihiro
• 著者標目: FURUHATA, Takashi; KITANO, Takeshi; MAGARA, Hiroyuki; MASUDA, Atsushi; TANAKA, So; MOTO, Akihiro; TAKAHASHI, Mitsuo; TANABE, Tatsuya; TAKAGISHI, Shigenori; YAMAMOTO, Akio; HASHIMOTO, Akihiro
• 出版事項: The Institute of Pure and Applied Physics
• 出版年月日等: 2009-11-30
• 出版年（W3CDTF）: 2009-11-30
• タイトル（掲載誌）: Proceedings of International Workshop on Nitride Semiconductors
• 掲載ページ: 673-676
• 本文の言語コード: eng
• 件名標目: GaN_xAs_<1-x>; Raman scattering; natural superlattice cluster; thermal annealing; N-H bond
• 対象利用者: 一般
• 一般注記: Raman scattering from the GaN_xAs_<l-x> layers grown on the (001) GaAs substrates has been investigated to characterize the locally ordered structures in the grown layers. New optical phonon modes from the confined GaAs and GaN structures and the disorder activated modes were observed. These new modes strongly suggest the presence of the trigonal {111}-(GaN)_1(GaAs)_1 natural superlattice cluster in the GaN_xAs<l-x> layers. A thermal annealing effect has been also investigated through the variation of the confined GaAs- and the GaN-like modes and we have confirmed that the hydrogen (H) atoms included in the as-grown GaN_xAs_<1-x> layers desorb from the layers by the annealing. The results strongly indicate that the H-induced degradation in the natural superlattice cluster are recovered through breaking of the N-H bonds by the annealing.
• 一次資料へのリンクURL: https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22183&item_no=1&attribute_id=22&file_no=1
• オンライン閲覧公開範囲: 限定公開
• 連携機関・データベース: 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• 提供元機関・データベース: 福井大学 : 福井大学学術機関リポジトリ