一般注記Temperature dependence of sheet electron density (ns) and mobility (μ) for Ti/Al deposited AlGaN/GaN heterostructures annealed in vacuum has been investigated using Hall effect measurements. The vacuum annealing at 1020K caused the increase in both ns and μ at room temperature, with the amount of one order of magnitude and 65%, respectively, as compared to without annealed sample. The amount of increase was much less for only Ti or Al deposited or totally thin Ti/Al deposited sample. The origin of the increase is attributed to tensile strain induced by vacuum annealing. The method is useful for reducing the ohmic contact resistivity and/or the access resistance between source and gate in AlGaN/GaN HEMTs.
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連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース(IRDB)(機関リポジトリ)