Characterization of GaN based Schottky UV detectors in the vacuum UV (VUV) and the soft X-ray (SX) region (10-100 nm)

• 資料種別: その他
• タイトル: Characterization of GaN based Schottky UV detectors in the vacuum UV (VUV) and the soft X-ray (SX) region (10-100 nm)
• 著者・編者: MOTOGAITO, Atsushi; WATANABE, Hironobu; HIRAMATSU, Kazumasa; FUKUI, Kazutoshi; HAMAMURA, Yutaka; TADATOMO, Kazuyuki
• 著者標目: MOTOGAITO, Atsushi; WATANABE, Hironobu; HIRAMATSU, Kazumasa; FUKUI, Kazutoshi; HAMAMURA, Yutaka; TADATOMO, Kazuyuki
• 出版事項: John Wiley & Sons
• 出版年月日等: 2003
• 出版年（W3CDTF）: 2003
• タイトル（掲載誌）: Physica Status Solidi - A - Applications and Materials Science
• 巻号年月日等（掲載誌）: 200 1
• 掲載巻: 200
• 掲載号: 1
• 掲載ページ: 147-150
• 対象利用者: 一般
• 一般注記: 出版タイプ： AO; Responsivity spectra of GaN based Schottky type ultraviolet (UV) photodetectors with transparent electrode from the Vacuum Ultraviolet (VUV) region to soft X-ray (SX) region (10-100 nm, 124-12.4 eV) are described for the first time. The calculated transmittance of 10 nm-thick transparent Ni/Au electrode from the transmittance of Ti/Au membrane is about 0.5-0.7 in the VUV and SX region (10-100 eV). Thus it is considered that the 10-nm-transparent Ni/Au electrode is thin enough to transmit VUV and SX light into the transparent electrode. The value of responsivity in the SX region (at 13 nm) is about 0.05 A/W.
• 連携機関・データベース: 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• 提供元機関・データベース: 福井大学 : 福井大学学術機関リポジトリ