High performance Schottky UV detectors (265-100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer

• 資料種別: 文書・図像類
• タイトル: High performance Schottky UV detectors (265-100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer
• 著者・編者: MIYAKE, H; YASUKAWA, H; KIDA, Y; OHTA, K; SHIBATA, Y; MOTOGAITO, A; HIRAMATSU, K; OHUCHI, Y; TADATOMO, K; HAMAMURA, Y; FUKUI, K
• 著者標目: MIYAKE, H; YASUKAWA, H; KIDA, Y; OHTA, K; SHIBATA, Y; MOTOGAITO, A; HIRAMATSU, K; OHUCHI, Y; TADATOMO, K; HAMAMURA, Y; FUKUI, K
• 出版事項: John Wiley & Sons
• 出版年月日等: 2003
• 出版年（W3CDTF）: 2003
• タイトル（掲載誌）: Physica Status Solidi - A - Applications and Materials Science
• 巻号年月日等（掲載誌）: 200 1
• 掲載巻: 200
• 掲載号: 1
• 掲載ページ: 151-154
• 本文の言語コード: eng
• 対象利用者: 一般
• 一般注記: 出版タイプ： AO; A high responsivity spectrum in the near ultraviolet (UV) and the vacuum UV (VUV) region was realized using Schottky UV detectors consisting of Al0.5Ga0.5N on an AlN epitaxial layer. The cut-off wavelength of AlGaN UV detectors was 4.7 eV (265 nm), a value that corresponds to the band gap of Al0.5Ga0.5N. The contrast of responsivity between the near UV and the visible was about 104. The GaN Schottky detector hads a high responsivity region in the near-UV from 3.4 to 5.0 eV (250-360 nm), whereas the AlGaN UV detector had a high responsivity in the UV-VUV region from 4.7 to 12.4 eV (100-265 nm). From these results, the fabricated AlGaN-based UV photodetectors can likely be used in detectors for the UV-VUV region.
• 連携機関・データベース: 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• 提供元機関・データベース: 福井大学 : 福井大学学術機関リポジトリ