一般注記This paper reports the deterioration of nitrogen (N)-face of wurtzite InN in the NH_3 ambient near the growth temperature. Using an atmospheric-pressure MOVPE system, both In-polar and N-polar InN are grown by controlling the nitridation temperature of a sapphire substrate. The N-face has a much larger etching rate (40 nm/h) compared with that of the In-face (14 nm/h). From the PL measurement from the front surface and the rear surface through the sapphire substrate, it is shown that the N-face of both In- and N-polar films shows a marked intensity reduction and a large blue shift of PL spectrum. These facts show that the N-face of InN is very unstable and deteriorates in the NH_3 ambient. The deterioration becomes severer at a temperature higher than 550 °C. Since such a PL shift is due to the Burstein-Moss effect, the result indicates that the high density of donor-type defects are preferentially introduced on the N-face of InN. Further investigations will be needed to clarify whether such instability of N-face in the NH_3 ambient is related to the poorer quality of MOVPE InN.
一次資料へのリンクURLhttps://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22191&item_no=1&attribute_id=22&file_no=1
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース(IRDB)(機関リポジトリ)