Growth temperature dependent critical thickness for phase separation in thick (1 um) InxGa1-xN (x=0.2?0.4)

• 資料種別: 文書・図像類
• タイトル: Growth temperature dependent critical thickness for phase separation in thick (1 um) InxGa1-xN (x=0.2?0.4)
• 著者・編者: Yamamoto, A.; Hasan, Md Tanvir; Kodama, K.; Shigekawa, N.; Kuzuhara, M.
• 著者標目: Yamamoto, A.; Hasan, Md Tanvir; Kodama, K.; Shigekawa, N.; Kuzuhara, M.
• 出版事項: ELSEVIER SCIENCE BV
• 出版年月日等: 2015-06
• 出版年（W3CDTF）: 2015-06
• タイトル（掲載誌）: Journal of Crystal Growth
• 巻号年月日等（掲載誌）: 419
• 掲載巻: 419
• 掲載ページ: 64-68
• 本文の言語コード: eng
• 件名標目: A1. Phase separation; A3. Metalorganic vapor phase epitaxy; B2.Nitrides
• 対象利用者: 一般
• 一般注記: This paper reports phase separation in thick (-1 pm) MOVPE In,Gai_xN (x = 0.2-0.4) films grown by MOVPE at 570-750°C on AIN/Si(111), a-A1203(0001) and GaN/a-A1203(0001) substrates. Phase separation occurs when InGaN thickness exceeds a critical value. Critical thickness for phase separation is markedly increased with decreasing growth temperature. It is around 0.2 pm for a film grown at 750°C, while it is more than 1 pm for that grown at 570°C. No substrate dependencies are found in critical thickness. The cross-sectional SEM views of phase-separated films grown at 650°C show that phase separation is initiated at parts farer more than 0.2 pm from the substrate and extended to the area near the substrate. SIMS analysis shows a possibility that phase separation is initiated at a part with relatively large In/Ga ratio fluctuations in InGaN films.
• 一次資料へのリンクURL: https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22326&item_no=1&attribute_id=22&file_no=1
• オンライン閲覧公開範囲: 限定公開
• 著作権情報: 〓 2015 Elsevier B.V.
• 関連情報（DOI）: 10.1016/j.jcrysgro.2015.02.100
• 連携機関・データベース: 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• 提供元機関・データベース: 福井大学 : 福井大学学術機関リポジトリ