タイトル(掲載誌)Journal of Crystal Growth
一般注記This paper reports phase separation in thick (-1 pm) MOVPE In,Gai_xN (x = 0.2-0.4) films grown by MOVPE at 570-750°C on AIN/Si(111), a-A1203(0001) and GaN/a-A1203(0001) substrates. Phase separation occurs when InGaN thickness exceeds a critical value. Critical thickness for phase separation is markedly increased with decreasing growth temperature. It is around 0.2 pm for a film grown at 750°C, while it is more than 1 pm for that grown at 570°C. No substrate dependencies are found in critical thickness. The cross-sectional SEM views of phase-separated films grown at 650°C show that phase separation is initiated at parts farer more than 0.2 pm from the substrate and extended to the area near the substrate. SIMS analysis shows a possibility that phase separation is initiated at a part with relatively large In/Ga ratio fluctuations in InGaN films.
一次資料へのリンクURLhttps://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22326&item_no=1&attribute_id=22&file_no=1
関連情報(DOI)10.1016/j.jcrysgro.2015.02.100
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース(IRDB)(機関リポジトリ)