タイトル（掲載誌）IEEE Transactions on Electron Devices
一般注記This paper describes recent technological advances on III-nitride-based transistors for power switching applications. Focuses are placed on the progress toward enhancing the breakdown voltage, lowering the ON -resistance, suppressing current collapse, and reducing the leakage current in AlGaN/GaN high-electron mobility transistors (HEMTs). Recent publications revealed that the tradeoff relation between ON -resistance and breakdown voltage in AlGaN/GaN HEMTs exceeded the SiC limit and was getting close to the GaN limit; however, the breakdown voltage achieved was still lower than the theoretical impact ionization limit. A novel process featuring strain-controlled annealing with a metal stack, including Al gave rise to significant reduction in the sheet resistance in AlGaN/GaN heterostructures, suggesting the possibility of dramatic reduction in ON -resistance of GaN-based power devices. Some of the interesting approaches to suppress current collapse indicated that surface trapping effects must be controlled by the optimization of surface processing as well as by the reduction of bulk traps in the epitaxial layers. Close correlation between the local gate leakage current and point defects exposed on the free-standing GaN substrate demonstrated that further reduction of defects on bulk GaN substrates is truly required as future challenges.
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連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）