タイトル(掲載誌)宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals
一般注記We have succeeded in scaling up of platy In(0.1)Ga(0.9)As single crystals grown by the traveling liquidus-zone (TLZ) method from 10 to 20 mm in width without deteriorating compositional uniformity. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrate use were difficult to be grown on the ground because convection in a melt is intensified by the enlargement of diameter. Therefore, we attempted to grow platy In(1-x)Ga(x)As crystals. Merits of platy crystals are suppression of convection in a melt by limiting the thickness of the melt and achievement of sufficient area for substrate use. Successful scaling up of platy crystals shows that enlargement of the width of platy crystals will not affect the intensity of convection in a melt. This result supports the hypothesis that convection in a platy melt is limited by its small thickness and not by its width.
資料番号: AA0049798002
レポート番号: JAXA-SP-05-036E
一次資料へのリンクURLhttps://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=6090&item_no=1&attribute_id=31&file_no=1
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース(IRDB)(機関リポジトリ)
提供元機関・データベース宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ