タイトル(掲載誌)宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals
一般注記Crystal growth of spatially homogeneous In(x)Ga(1-x)As substrates, which has a tunable lattice matching between the substrate and the epilayer for InGaAs-based optoelectronic devices, is very difficult due to the considerable amount of convective flow on ground. This problem can be overcome, if the crystal growth is carried out in micro-gravity conditions and the starting material is chosen with particular specifications. The initial studies have indicated that the starting material is required to be cylindrically shaped polycrystalline InGaAs with a particular gradient in its compositional profile. This starting material has been grown and grinded to the required shape. In a view to analyze the compositional profile of this cylindrical polycrystalline starting material using a non-destructive method, some results of micro-Raman scattering studies are reported. Further, the effect of the surface condition on Raman results are also discussed, by comparing the results obtained from as-grinded and polished surfaces.
資料番号: AA0032602007
レポート番号: NASDA-TMR-010016E
一次資料へのリンクURLhttps://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42550&item_no=1&attribute_id=31&file_no=1
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース(IRDB)(機関リポジトリ)
提供元機関・データベース宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ