Study on polycrystallization and residual strain in bulk I[lc]n(x)G[lc]a(1-x)A[lc]s crystal

• 資料種別: 文書・図像類
• タイトル: Study on polycrystallization and residual strain in bulk I[lc]n(x)G[lc]a(1-x)A[lc]s crystal
• 著者・編者: Islam, M. R.; Verma, P.; 山田, 正良; 児玉, 茂夫; 花上, 康宏; 木下, 恭一; Yamada, Masayoshi; Kodama, Shigeo; Hanaue, Yasuhiro; Kinoshita, Kyoichi
• 著者標目: Islam, M. R.; Verma, P.; 山田, 正良; 児玉, 茂夫; 花上, 康宏; 木下, 恭一; Yamada, Masayoshi; Kodama, Shigeo; Hanaue, Yasuhiro; Kinoshita, Kyoichi
• 出版事項: 宇宙開発事業団
• 出版年月日等: 2002-12-27
• 出版年（W3CDTF）: 2002-12-27
• 並列タイトル等: バルクなIn(x)Ga(1-x)As結晶における多結晶化と残余歪みの研究
• タイトル（掲載誌）: 宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystals
• 掲載ページ: 61-71
• ISSN（掲載誌）: ISSN : 1345-7888
• 本文の言語コード: eng
• 件名標目: In(x)Ga(1-x)As; 多結晶化; 結晶成長; 残余歪み; Raman散乱; フォトルミネッセンス; 多成分ゾーンメルティング; polycrystallization; crystal growth; residual strain; Raman scattering; photoluminescence; multicomponent zone melting
• 対象利用者: 一般
• 一般注記: Micro-Raman scattering and photoluminescence (PL) studies were performed to understand the polycrystallization mechanism in bulk In(x)Ga(1-x)As crystal grown by the two-step multi-component zone melting (MCZM) method. Raman studies were also performed with the aim to understand the influence of residual strain on the shifts in phonon frequencies in Raman spectra. Unlike the usual observation of polycrystallization at the peripheral region of the ingot, a special polycrystallization was observed in the etching results inside the MCZM crystal. The polycrystalline region was found to have a drastic fluctuation of phonon peak positions as well as PL peak wavelength (composition) in the local region, which could be due to supercooling resulting in formation of polycrystal in the investigated crystal. Further, it is observed that the LO(sub GaAs) phonon frequency is varied for various measurement points, which may be related to the compositional variation in the samples. However, it is found from precise micro-Raman measurements both in a corner region and in a chipped region that there exists a large amount of residual strain in the samples. By comparing the observed LO(sub GaAs) phonon frequencies with those estimated from the compositions determined by the energy dispersive x-ray analysis, they are found to be shifted by about 9.5 cm(sup -1) due to residual strain, which corresponds to a strain value of the order of 10(exp -2).; 資料番号: AA0045402005; レポート番号: NASDA-TMR-020024E
• 一次資料へのリンクURL: https://jaxa.repo.nii.ac.jp/?action=repository_action_common_download&item_id=42844&item_no=1&attribute_id=31&file_no=1
• オンライン閲覧公開範囲: 限定公開
• 連携機関・データベース: 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• 提供元機関・データベース: 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ