並列タイトル等地球重力状態におけるInAs-GaAsからなる2成分半導体の結晶成長
タイトル（掲載誌）宇宙開発事業団技術報告: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成 = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals
一般注記The crystal growth process of an InAs-GaAs binary semiconductor by the Traveling Liquidus-Zone (TLZ) method is investigated under terrestrial gravitational conditions numerically and the effect of the angle between the crystal growth direction and the gravity direction on the crystal growth process is discussed. First, this new crystal growth technique is explained and then a numerical mode and calculation method of the growth of binary crystals are developed, by which the flow field in the solution, the temperature and concentration fields in both the solution and crystals, and the shape and movement of the crystal-solution interfaces are determined. Focused is, in particular, the effect of the crystal size and the inclination angle on the crystal growth process. It is found that 1) When the crystal size is 2 mm, convection is reduced and the concentration field is not seriously deformed as long as the inclination angle is less than 1 degree. The degree of supercooling is remarkably reduced compared to the case when crystals are grown in the horizontal direction; 2) When the crystal size is greater than 5 mm, convection is intensified and the concentration field is seriously deformed. The degree of supercooling is increased as the inclination angle increases. The above results show that growing single crystals under terrestrial gravitational conditions are very difficult if the crystal size is greater than 5 mm.
資料番号: AA0046981003
レポート番号: NASDA-TMR-030006E
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
提供元機関・データベース宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ