授与機関名広島大学(Hiroshima University)
一般注記type:text
This paper presents the device technologies of NAND Flash memory to realize low bit cost and high reliability.
First, planar (two-dimensional) NAND Flash memory cells are discussed. Four types of NAND Flash memory cells of the LOCOS (LOCal Oxidation of Silicon) isolation cell, the SA-STI cell (Self-Aligned Shallow Trench Isolation cell) with FG wing, the SA-STI cell without FG wing, and SWATT cell (Side WAll Transfer Transistor cell) have been proposed and developed. By using these proposed memory cell, NAND Flash memory cell has been scaled down over 20 years to achieve small memory die size, high performance, and high reliability.……
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース(IRDB)(機関リポジトリ)