並列タイトル等テイオン スイソ イオン チュウニュウ ニヨリ ドウニュウ サレタ シリコン ケッショウ ケッカン ノ トクセイ ブンセキ
Defects in Crystalline Silicon Induced by Low Temperature H^+Implantation
タイトル(掲載誌)総合技術研究所研究報告=Bulletin of Research Institute for Industrial Technology.
一般注記In low dose hydrogen implanted sample, meta-stable defects induced by hydrogen implanted have not been observed in silicon implanted at room temperature. We first observed it in n-type silicon which implanted at 109K. One of the meta-stable defects (EM1) was investigated in detail. Consequently, the energy level Ec and electron capture cross section were decided to-0.29eV and 4.7×10^<-15>cm^2, respectively. EM1 was appeared in the condition of minus bias and 240-280K, then it was vanished in the condition of 0V bias and 190-250K. In high dose implanted sample, the exfoliated surface induced by furnace annealing was observed. The quantity of defect is proportional to the concentration of dopant, and it is interesting to note that p++ and p type had a sharp peak in the depth profile, but n type had a broad peak and a second peak in a shallow region. The number of exfoliation was proportional to the dopant concentration. The total exfoliated area (ratio of area). The other hand, the average area of exfoliation was biggest in n type silicon and was in smallest in p++ type. It seems that the average area was not affected bv dooant. while it was affected bv the deoth of exfoliation.
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/1619
一次資料へのリンクURLhttp://repository.aitech.ac.jp/dspace/bitstream/11133/1619/1/%e7%b7%8f%e7%a0%945%e5%8f%b7%28P45-49%29.pdf
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース(IRDB)(機関リポジトリ)