並列タイトル等シリコン キバン ジョウ GaN ノ コウブンカイ TEM カンサツ
HR-TEM Analyses of GaN grown on silicon substrate
タイトル(掲載誌)総合技術研究所研究報告=Bulletin of Research Institute for Industrial Technology.
一般注記Growth of a high quality GaN on a silicon substrate has been attempted. In order to prevent Ga-Si reaction at high temperatures,an AlInN alloy was tested as the intermediate layer between the GaN grown layer and the Si substrate. It was found that growth of thin AlN layer followed by the growth of AlInN intermediate layer could improve crystalline quality of the GaN top layer. The density of threading dislocation as well as point defect are reduced substantially. High resolution (HR-) TEM analyses showed that the AlN layer has been grown on Si substrate introducing misfit dislocation. Moreover,the AInN layer has also been grown epitaxially introducing misfit dislocations as predicted by nominal lattice constants at room temperature.
identifier:http://repository.aitech.ac.jp/dspace/handle/11133/2097
一次資料へのリンクURLhttp://repository.aitech.ac.jp/dspace/bitstream/11133/2097/1/%e7%b7%8f%e7%a0%9414%e5%8f%b7%28P23-26%29.pdf
連携機関・データベース国立情報学研究所 : 学術機関リポジトリデータベース(IRDB)(機関リポジトリ)