Process and device simulation for MOS-VLSI circuits / edited by Paolo Antognetti ... [et al.].

• 資料種別: 図書
• ISBN: 902472824X (Netherlands)
• タイトル: Process and device simulation for MOS-VLSI circuits / edited by Paolo Antognetti ... [et al.].
• シリーズタイトル: NATO ASI series. Series E, Applied sciences ; no. 62
• 著者標目: NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits (1982 : Urbino, Italy); Antognetti, Paolo.
• 出版事項: Boston : Nijhoff; Hingham, MA : Distributors for the U.S. and Canada, Kluwer Boston
• 出版年月日等: 1983.
• 出版年（W3CDTF）: 1983
• 数量: xii, 619 p. : ill. ; 25 cm.
• 出版地（国名コード）: US
• 本文の言語コード: eng
• 件名標目: Integrated circuits -- Very large scale integration -- Simulation methods -- Congresses.; Metal oxide semiconductors -- Simulation methods -- Congresses.
• LCC: TK7874
• DDC: 621.381/73
• NDLC: M15; ND
• 一般注記: "Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982"--T.p. verso.; "Published in cooperation with NATO Scientific Affairs Division."
• 書誌注記: Includes bibliographical references.
• 所蔵機関: 国立国会図書館
• 請求記号: M15-A231
• 連携機関・データベース: 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• 書誌ID（NDLBibID）: 000003128064; http://id.ndl.go.jp/bib/000003128064
• LC control number: 83004018 //r85; https://lccn.loc.gov/83004018
• 整理区分コード: 211