Quantitative mapping of pore fraction variations in silicon nitride using an ultrasonic contact scan technique [microform] / Don J. Roth ... [et al.] (NASA technical paper ; 3377)
Quantitative mapping of pore fraction variations in silicon nitride using an ultrasonic contact scan technique [microform] / Don J. Roth ... [et al.]
原資料の出版事項: [Washington, DC] ; [Springfield, Va. : National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Program : National Technical Information Service, distributor], 1993