Applied physics express : APEX

• 資料種別: 雑誌
• ISSN: 1882-0778
• ISSN-L: 1882-0778
• タイトル: Applied physics express : APEX
• 巻次・部編番号: 4(1)-4(6):2011.1-2011.6
• 著者標目: 応用物理学会 オウヨウ ブツリ ガッカイ ( 00281497 )典拠
• 出版事項: Tokyo : Japan Society of Applied Physics
• 出版年月日等: 2011
• 出版年（W3CDTF）: 2011
• 刊行巻次・年月次: v. 1, no. 1 (Jan. 2008)-
• 大きさ: 30cm
• 出版地（国名コード）: JP
• 本文の言語コード: eng
• NDLC: ZM35
• 所蔵機関: 国立国会図書館
• 請求記号: Z78-A526
• 関連情報: 関連資料; https://ndlsearch.ndl.go.jp/books/R100000002-I000004245159; 区分換; https://ndlsearch.ndl.go.jp/books/R100000002-I025350370
• 連携機関・データベース: 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• 書誌ID（NDLBibID）: 000008533915; http://id.ndl.go.jp/bib/000008533915
• 全国書誌番号: 01018033
• 目録規則: 日本目録規則1987年版改訂版
• 整理区分コード: 132

目次

Memristor behaviors of highly oriented anatase TiO2 film sandwiched between top Pt and bottom SrRuO3 electrodes

Seebeck coefficient and power factor of single-crystalline boron nanobelts

Injection-type GaInAsP/InP membrane buried heterostructure distributed feedback laser with wirelike active regions

Green gap spectral range light-emitting diodes with self-assembled InGaN quantum dots formed by enhanced phase separation

Effect of 4-tert-butylpyridine on the quasi-Fermi level of dye-sensitized TiO2 films

Erbium-doped AlInGaN alloys as high-temperature thermoelectric materials

Direct observation at nanoscale of resistance switching in NiO layers by conductive-atomic force microscopy

High-performance Ge metal-oxide-semiconductor field-effect transistors with a gate stack fabricated by ultrathin SiO2/GeO2 bilayer passivation

Second harmonic vibrational mode of substitutional carbon in cast-grown multicrystalline silicon

Large transverse piezoelectricity in strained (Na,Bi)TiO3-BaTiO3 epitaxial thin films on MgO(110)

GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate

Formation of recessed-oxide gate for normally-off AlGaN/GaN high electron mobility transistors using selective electrochemical oxidation

Kelvin probe force microscopy of defects in ZnO nanocrystals associated with emission at 3.31 eV

First principles materials design of negative activation energy and transparent conducting sulfides in n-type CuAl1-xSn[x]S2 and p-type Cu1-xV[Cux]AlS2

Modulation of NiGe/Ge contact resistance by S and P co-introduction

Crack-free, highly conducting GaN layers on Si substrates by Ge doping

Highly conducting and very thin ZnO: Al films with ZnO buffer layer fabricated by solid phase crystallization from amorphous phase

Circularly polarized light from chiral lanthanide(3) complexes in single crystals

Enhanced light output of AlGaInP light emitting diodes using an indium-zinc oxide transparent conduction layer and electroplated metal substrate

A hybrid micro-pixel based deep ultraviolet light-emitting diode lamp

Raman scattering spectroscopy of residual stresses in epitaxial AlN films

Fabrication of direct silicon bonded hybrid orientation substrate by separation by implanted oxygen layer transfer and oxide dissolution annealing

Junctionless Ge p-channel metal-oxide-semiconductor field-effect transistors fabricated on ultrathin Ge-on-insulator substrate

Ultrafast polarization switching in ferroelectric polymer thin films at extremely high electric fields

Room-temperature current oscillation based on negative differential resistance in a one-dimensional organic charge-transfer complex

Determination of composition and lattice relaxation in semipolar ternary (In,Al,Ga)N strained layers from symmetric X-ray diffraction measurements

284-300nm quaternary InAlGaN-based deep-ultraviolet light-emitting diodes on Si(111) substrates

Temporal donor generation in undoped hydrogenated amorphous silicon induced by swift proton bombardment

High normalized strain obtained in Li-modified (K,Na)NbO3 lead-free piezoceramics

Computational analysis of thermal energetic disorder in a pentacene crystal: temperature dependence of trap levels and possible novel thermoelectric contribution