Japanese journal of applied physics : JJAP

• 資料種別: 雑誌
• タイトル: Japanese journal of applied physics : JJAP
• 巻次・部編番号: 52(10)(2):2013.10
• 著者標目: 応用物理学会 オウヨウ ブツリ ガッカイ ( 00281497 )典拠
• 出版事項: Tokyo : The Japan Society of Applied Physics
• 出版年月日等: 2013
• 出版年（W3CDTF）: 2013
• 刊行巻次・年月次: v. 47, no. 1 (Jan. 2008)-
• 大きさ: 30cm
• ISSN（掲載誌）: 0021-4922
• ISSN-L（掲載誌）: 0021-4922
• 出版地（国名コード）: JP
• 本文の言語コード: eng
• NDLC: ZM35
• 一般注記: Description based on the latest issue; Issued in 2 parts
• 所蔵機関: 国立国会図書館
• 請求記号: Z53-A375
• 関連情報: 区分換 : Japanese journal of applied physics (ISSN:0021-4922); https://ndlsearch.ndl.go.jp/books/R100000002-I025330922
• 改題前: 継続前 : Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers; https://ndlsearch.ndl.go.jp/books/R100000002-I000000159719
• 連携機関・データベース: 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• 書誌ID（NDLBibID）: 000009262265; http://id.ndl.go.jp/bib/000009262265
• 目録規則: 日本目録規則1987年版改訂版

目次

Leakage Current Suppression on Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistors by Asymmetrically Deposited Nickel (Special Issue : Electronic Materials and Nanotechnology for Green Environment)

Effect of Chloride Precursors on the Stability of Solution-Processed Indium Zinc Oxide Thin-Film Transistors (Special Issue : Electronic Materials and Nanotechnology for Green Environment)

Improved Performance of (1122) Semipolar InGaN/GaN Light-Emitting Diodes Grown Using a Hemispherically Patterned SiO₂ Mask (Special Issue : Electronic Materials and Nanotechnology for Green Environment)

Investigation of the Thermal Dissipation Characteristics of a Light-Emitting Diode Package Using Mold Surface Temperature (Special Issue : Electronic Materials and Nanotechnology for Green Environment)

Electrical Characteristics of Pt Schottky Contacts on AlInN:Mg/GaN Heterostructures (Special Issue : Electronic Materials and Nanotechnology for Green Environment)