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博士論文

炭素ベースの全無機ペロブスカイト太陽電池の界面エンジニアリング

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炭素ベースの全無機ペロブスカイト太陽電池の界面エンジニアリング

国立国会図書館永続的識別子
info:ndljp/pid/12303861
資料種別
博士論文
著者
Han, Qianji
出版者
-
授与年月日
2022-03-25
資料形態
デジタル
ページ数・大きさ等
-
授与機関名・学位
九州工業大学,博士(工学)
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資料に関する注記

一般注記:

九州工業大学博士学位論文 学位記番号: 生工博甲第429号 学位授与年月日: 令和4年3月25日令和3年度

資料詳細

要約等:

Recently, perovskite solar cells (PSCs) have attracted great attention because of their facile fabrication and excellent photovoltaic performance. So ...

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提供元:国立国会図書館デジタルコレクションヘルプページへのリンク
  • 2023-08-05 再収集

  • 2023-10-11 再収集

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デジタル

資料種別
博士論文
著者・編者
Han, Qianji
著者標目
出版年月日等
2022-03-25
出版年(W3CDTF)
2022-03-25
並列タイトル等
Interfacial Engineering for Carbon-Based All-Inorganic Perovskite Solar Cells
授与機関名
九州工業大学
授与年月日
2022-03-25
授与年月日(W3CDTF)
2022-03-25
報告番号
甲第429号
学位
博士(工学)
博論授与番号
甲生工第429号
本文の言語コード
eng
対象利用者
一般
一般注記
九州工業大学博士学位論文 学位記番号: 生工博甲第429号 学位授与年月日: 令和4年3月25日
令和3年度
国立国会図書館永続的識別子
info:ndljp/pid/12303861
コレクション(共通)
コレクション(障害者向け資料:レベル1)
コレクション(個別)
国立国会図書館デジタルコレクション > デジタル化資料 > 博士論文
収集根拠
博士論文(自動収集)
受理日(W3CDTF)
2022-07-05T02:30:21+09:00
記録形式(IMT)
application/pdf
PDF
オンライン閲覧公開範囲
国立国会図書館内限定公開
デジタル化資料送信
図書館・個人送信対象外
遠隔複写可否(NDL)
連携機関・データベース
国立国会図書館 : 国立国会図書館デジタルコレクション

デジタル

要約等
Recently, perovskite solar cells (PSCs) have attracted great attention because of their facile fabrication and excellent photovoltaic performance. So far, the power conversion efficiency (PCE) of PSCs has rapidly increased from 3.8 % to 25.5 %. All-inorganic perovskite materials, typically CsPbI2Br, have received widespread attention due to their illustrious thermal stability and appropriate bandgap. Furthermore, carbon-based CsPbI2Br perovskite solar cells not only further improve the thermal and moisture stability of the devices but also reduce production costs and simplify procedure processes. However, the inevitable defects of the perovskite layer, energy level mismatch between perovskite and carbon electrodes, and the phase instability of CsPbI2Br limit the enhancement of PCE and stability for carbon-based CsPbI2Br PSCs. This thesis focuses on improving the performance and stability of carbon-based all-inorganic PSCs through the interface modification method. Firstly, we used the N-phenylthiourea (PTU) and N-phenylurea (PU) with S or O elements and phenyl rings as modifiers of perovskite layers. The results show that either PTU or PU can promote the crystallinity of the perovskite film and effectively suppress the recombination of charge carriers. Secondly, we applied a small molecule material, delta-2:2-bis(1,3-dithiazole), to modify the interface between perovskite and carbon electrode. We found that the sulfur atom of the target molecule (TM) can effectively interact with the Pb ion of perovskite, which can decrease the trap density of perovskite films and suppress the recombination. Thirdly, we introduced a double perovskite material, Cs2PtI6, to do the passivation of CsPbI2Br perovskite. We found that the fabricated device performance is improved, because the Cs2PtI6 can adjust the energy levels between the interfaces of the CsPbI2Br/carbon electrode and fill in the defects of perovskite surfaces and grain boundaries. As a result, the champion PCE of 13.69% was achieved after Cs2PtI6 introduction, the stability of the device was significantly improved under several conditions. In chapter 1, the progress and types of photovoltaic technology and the current development of the perovskite solar cells were introduced. In addition, the perovskite materials, the structure, and the working principle of the device also have been described. Moreover, the classification of perovskite solar cells and the advantages and disadvantages of all-inorganic perovskite solar cells were also introduced. Finally, the current issues of the carbon-based all inorganic perovskite solar cells and the purpose of this thesis were depicted. In chapter 2, the used reagents and apparatus in this thesis were listed. In addition, basic principles and techniques were described, such as XRD, FE-SEM, XPS, UV-Vis, UPS, SCLC, PL, and TRPL. Meanwhile, the information about the related equipment were also given. In chapter 3, for enhancing the performance and energy level match of the carbon-based all-inorganic PSCs. The N-phenylthiourea (PTU) with S atom and N-phenylurea (PU) with O atom were applied for interface modification materials in C-PSCs. The atoms S and O can combine with Pb and enhance perovskite crystallinity as well as manage the energy level. Meanwhile, after the passivation of PTU and PU, the defect state density of the perovskite layer is significantly reduced, thereby inhibiting the recombination of carriers. The Voc of the device with PTU increases from 1.12 V to 1.22V, 9% improvement over the control device. The efficiency of CsPbI2Br C-PSCs is improved from 10.29% to 13.01% after modification. Furthermore, the stability of the device has been improved. In chapter 4, for improved the performance of the devices, a sulfur-rich small molecule material (delta-2:2-bis (1,3-dithiazole)), was used to modify the interface between CsPbI2Br and carbon electrode. Encouragingly, the carbon-based CsPbI2Br PSCs achieve a high PCE of 13.78 % than the control of 10.40 %. The remarkable reduction of defect density and suppression recombination should be responsible for the PCE improvement. In chapter 5, for increased the PCE and stability of carbon-based CsPbI2Br PSCs. We demonstrate a simple and effective strategy for regulating energy level, inhibiting carrier recombination, and delaying the degradation of perovskite by modifying the surface of CsPbI2Br with a new type of 2D perovskite Cs2PtI6. The carbon-based CsPbI2Br PSCs achieve a higher PCE (13.69 %) than the control device (11.10 %). The excellent matching of the energy level and suppression of charge carrier recombination should be responsible for the improvement of efficiency. Furthermore, the excellent hydrophobic performance of Cs2PtI6 enhances the moisture resistance of the device. Finally, the general conclusions of this thesis and the further prospects were summarized. In addition to efficiency, long-term stability and production cost still are issues that need to be overcome in the commercialization process of the PSCs. It is also the object that we will focus on in the future.
記録形式(IMT)
application/pdf
一次資料へのリンクURL
sei_k_429.pdf (fulltext)
オンライン閲覧公開範囲
インターネット公開
連携機関・データベース
国立情報学研究所 : 学術機関リポジトリデータベース(IRDB)(機関リポジトリ)
提供元機関・データベース
九州工業大学 : キューテイカー