著者・編者Shubham Sahay, Mamidala Jagadesh Kumar
一般注記Includes bibliographical references and index
Summary: "Advancements in transistor technology have driven the modern smart-device revolution--many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture. JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it.
関連情報IEEE Press series on microelectronic systems
掲載誌IEEE Press series on microelectronic systems
連携機関・データベース国立情報学研究所 : CiNii Research
NACSIS書誌ID（NCID）https://ci.nii.ac.jp/ncid/BC12673095 : BC12673095