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CiNii Research
High quality semipolar (11¯02) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities
- 資料種別
- 記事
- 著者
- S. Ichikawaほか
- 出版者
- AIP Publishing
- 出版年
- 2014-06-23
- 資料形態
- デジタル
- 掲載誌名
- Applied Physics Letters 104 25
- 掲載ページ
- p.252102-
資料詳細
要約等:
- <jats:p>Adjusting the growth conditions from those for c-plane growth realizes high-quality semipolar (11¯02) AlGaN/AlN quantum wells (QWs) with atomi...
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デジタル
- 資料種別
- 記事
- 出版年月日等
- 2014-06-23
- 出版年(W3CDTF)
- 2014-06-23
- タイトル(掲載誌)
- Applied Physics Letters
- 巻号年月日等(掲載誌)
- 104 25
- 掲載巻
- 104
- 掲載号
- 25
- 掲載ページ
- 252102-
- 掲載年月日(W3CDTF)
- 2014-06-23
- ISSN(掲載誌)
- 00036951
- 出版事項(掲載誌)
- AIP Publishing
- 対象利用者
- 一般
- DOI
- 10.1063/1.4884897
- 作成日(W3CDTF)
- 2014-06-24
- 関連情報(URI)
- 参照
- Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopyDominant Nonradiative Recombination Paths and Their Activation Processes in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Al</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi mathvariant="normal">N</mml:mi></mml:math> -related MaterialsApproaches to highly efficient UV emitters based on AlGaN quantum wellsImproved internal quantum efficiencies of far-UVC AlGaN/AlN quantum wells by the use of semipolar <i>r</i>-planesModeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum ThermodynamicsThe polarization field in Al-rich AlGaN multiple quantum wellsEnhanced nonradiative recombination in Al<sub> x </sub>Ga<sub>1−x </sub>N-based quantum wells thinner than the critical layer thickness determined by X-ray diffractionConfinement-enhanced biexciton binding energy in AlGaN-based quantum wellsAl<i> <sub>x</sub> </i>Ga<sub>1−</sub> <i> <sub>x</sub> </i>N-based semipolar deep ultraviolet light-emitting diodesMetalorganic vapor phase epitaxy of pit-free AlN homoepitaxial films on various semipolar substratesLattice relaxation in semipolar Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N grown on (11̅02) AlN substratesOptical Anisotropy and Photopumped Lasing near 250 nm from Semipolar <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mo stretchy="false">(</mml:mo><mml:mn>1</mml:mn><mml:mover><mml:mn>1</mml:mn><mml:mo accent="false">¯</mml:mo></mml:mover><mml:mn>02</mml:mn><mml:mo stretchy="false">)</mml:mo></mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Al</mml:mi></mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi /><mml:mi>x</mml:mi></mml:msub></mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Ga</mml:mi></mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mrow><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:mrow></mml:math> / <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mrow><mml:mi>Al</mml:mi><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math> Quantum Wells with Cleaved MirrorsFully-relaxed n-AlGaN on AlN / Al2O3 templates using strain-relaxed super-lattice buffer layersCo-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wellsRoom-temperature operation of near-infrared light-emitting diode based on Tm-doped GaN with ultra-stable emission wavelengthSelf‐Limiting Growth of Ultrathin GaN/AlN Quantum Wells for Highly Efficient Deep Ultraviolet Emitters半極性面AlGaN量子井戸を利用した高効率深紫外発光素子の提案
- 参照
- 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphireStructural and optical properties of semipolar <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si0017.gif" overflow="scroll"><mml:mo stretchy="false">(</mml:mo><mml:mn>11</mml:mn><mml:mover accent="true"><mml:mrow><mml:mn>2</mml:mn></mml:mrow><mml:mrow><mml:mo>¯</mml:mo></mml:mrow></mml:mover><mml:mn>2</mml:mn><mml:mo stretchy="false">)</mml:mo></mml:math> AlGaN grown on <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si0018.gif" overflow="scroll"><mml:mo stretchy="false">(</mml:mo><mml:mn>10</mml:mn><mml:mover accent="true"><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>¯</mml:mo></mml:mrow></mml:mover><mml:mn>0</mml:mn><mml:mo stretchy="false">)</mml:mo></mml:math> sapphire by metal–organic vapor phase epitaxyOptical linewidth and field fluctuations in piezoelectric quantum wellsStrong optical polarization in nonpolar<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mo>(</mml:mo><mml:mn>1</mml:mn><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mn>00</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:math>Al<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mi>x</mml:mi></mml:msub></mml:math>Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>N/AlN quantum wellsExtremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral regionGrowth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxySurface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor depositionImproved Efficiency of 255–280 nm AlGaN-Based Light-Emitting DiodesTime‐resolved photoluminescence of Al‐rich AlGaN/AlN quantum wells under selective excitationAlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%Ultraviolet light-emitting diodes based on group three nitridesStructural properties of semipolar Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N($1\bar {1}03$) films grown on ZnO substrates using room temperature epitaxial buffer layersExcitonic luminescence linewidths in AlGaN alloys with high aluminum concentrationsEpitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPEDeep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiencyMOCVD growth of semipolar Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N on <i>m</i>‐plane sapphire for applications in deep‐ultraviolet light emittersShort-period superlattices of AlN∕Al0.08Ga0.92N grown on AlN substratesLinewidths of excitonic luminescence transitions in AlGaN alloysRoom temperature growth of semipolar AlN (1$ \bar 1 $02) films on ZnO (1$ \bar 1 $02) substrates by pulsed laser depositionPerformance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy
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