タイトル（掲載誌）Japanese Journal of Applied Physics
ISSN（掲載誌）00214922
http://id.crossref.org/issn/13474065
著作権情報https://iopscience.iop.org/page/copyright
https://iopscience.iop.org/info/page/text-and-data-mining
参照Surface roughness development on ArF-photoresist studied by beam-irradiation of CF<sub>4</sub>plasma
Ashing of photoresists using dielectric barrier discharge cryoplasmas
Dependence of absolute photon flux on infrared absorbance alteration and surface roughness on photoresist polymers irradiated with vacuum ultraviolet photons emitted from HBr plasma
Development of the sputtering yields of ArF photoresist after the onset of argon ion bombardment
参照Study of photoresist etching and roughness formation in electron-beam generated plasmas
Comparing 193 nm photoresist roughening in an inductively coupled plasma system and vacuum beam system
Study of 193nm photoresist degradation during short time fluorocarbon plasma exposure. I. Studies of modified layer formation
Study of ion and vacuum ultraviolet-induced effects on styrene- and ester-based polymers exposed to argon plasma
Fabrication of sub-60-nm contact holes in silicon dioxide layers
Effects of CH2F2 and H2 flow rates on process window for infinite etch selectivity of silicon nitride to ArF PR in dual-frequency CH2F2/H2/Ar capacitively coupled plasmas
Effect of high-frequency variation on the etch characteristics of ArF photoresist and silicon nitride layers in dual frequency superimposed capacitively coupled plasma
Understanding the Roughening and Degradation of 193 nm Photoresist during Plasma Processing: Synergistic Roles of Vacuum Ultraviolet Radiation and Ion Bombardment
Beam study of the Si and SiO2 etching processes by energetic fluorocarbon ions
Ar
+
bombardment of 193nm photoresist: Morphological effects
Sub-0.1 μm nitride hard mask open process without precuring the ArF photoresist
Etching yield of SiO2 irradiated by F+, CFx+ (x=1,2,3) ion with energies from 250 to 2000 eV
Analyses of the chemical topography of silicon dioxide contact holes etched in a high density plasma source
Comparison of etching characteristics of SiO2 with ArF photoresist in C4F6 and C4F8 based dual-frequency superimposed capacitively coupled plasmas
Study of 193nm photoresist degradation during short time fluorocarbon plasma exposure III. Effect of fluorocarbon film and initial surface condition on photoresist degradation
Study of 193nm photoresist degradation during short time fluorocarbon plasma exposures. II. Plasma parameter trends for photoresist degradation
Highly Transparent Chemically Amplified ArF Excimer Laser Resists by Absorption Band Shift for 193 nm Wavelength.
Characteristics of Very High-Aspect-Ratio Contact Hole Etching.
連携機関・データベース国立情報学研究所 : CiNii Research