Wurtzite [11-20]-oriented AlFeN films prepared by RF sputtering
Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect
<i>VESTA 3</i>for three-dimensional visualization of crystal, volumetric and morphology data
Magnetron sputtering
Band structure and photoconductivity of blue-green light absorbing AlTiN films
Crystal growth of a MnS buffer layer for non-polar AlN on Si (100) deposited by radio frequency magnetron sputtering
Effects of substrate self-bias and nitrogen flow rate on non-polar AlN film growth by reactive sputtering
Far-UVC light (222 nm) efficiently and safely inactivates airborne human coronaviruses
Crystallographic and electronic properties of AlCrN films that absorb visible light
Control of preferential orientation of AlN films prepared by the reactive sputtering method
Crystal structure-based discovery of a novel synthesized PARP1 inhibitor (OL-1) with apoptosis-inducing mechanisms in triple-negative breast cancer
Ultraviolet light-emitting diodes based on group three nitrides
Synthesis of c-axis oriented AlN thin films on different substrates: A review
Crystallographic properties and electronic structure of V-doped AlN films that absorb near ultraviolet-visible-infrared light
GaN, AlN, and InN: A review
Influence of sputtering mechanisms on the preferred orientation of aluminum nitride thin films
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Optimized Finite Difference Method for the Full-Potential XANES Simulations: Application to Molecular Adsorption Geometries in MOFs and Metal–Ligand Intersystem Crossing Transients
Effect of substrate temperature and bias voltage on the crystallite orientation in RF magnetron sputtered AlN thin films
Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation
Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties
Nitride Semiconductor Devices
Band parameters for III–V compound semiconductors and their alloys
Impact of nonpolar AlGaN quantum wells on deep ultraviolet laser diodes
SAW characteristics of AlN films sputtered on silicon substrates
Pulsed-flow growth of polar, semipolar and nonpolar AlGaN
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells.