Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN2 and MgSiN2

• 資料種別: 記事
• タイトル: Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN2 and MgSiN2
• 著者標目: Joshua Leveillee; https://orcid.org/0000-0003-2393-3973; Samuel Poncé; https://orcid.org/0000-0003-1159-8389; Nicholas L. Adamski; https://orcid.org/0000-0001-9966-2474; Chris G. Van de Walle; https://orcid.org/0000-0002-4212-5990; Feliciano Giustino; https://orcid.org/0000-0001-9293-1176
• 出版年月日等: 2022-05-16
• 出版年（W3CDTF）: 2022-05-16
• タイトル（掲載誌）: Applied Physics Letters
• 巻号年月日等（掲載誌）: 120 20
• 掲載巻: 120
• 掲載号: 20
• 掲載年月日（W3CDTF）: 2022-05-16
• ISSN（掲載誌）: 00036951
• 出版事項（掲載誌）: AIP Publishing
• 件名標目: Physics and Astronomy (miscellaneous)
• 対象利用者: 一般
• DOI: 10.1063/5.0092709
• 作成日（W3CDTF）: 2022-05-20
• 著作権情報: https://publishing.aip.org/authors/rights-and-permissions
• 関連情報（URI）: https://aip.scitation.org/doi/am-pdf/10.1063/5.0092709; https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0092709/16448192/202106_1_online.pdf
• 参照: Tight-binding analysis of the effect of strain on the band structure of GaN; https://cir.nii.ac.jp/crid/1360017280673934848
• 連携機関・データベース: 国立情報学研究所 : CiNii Research
• 提供元機関・データベース: Crossref; https://www.crossref.org

• 要約等: <jats:p>The key obstacle toward realizing integrated gallium nitride (GaN) electronics is its low hole mobility. Here, we explore the possibility of i...