Defect formation and phase stability of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Cu</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mtext>ZnSnS</mml:mtext></mml:mrow><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>photovoltaic material

• 資料種別: 記事
• タイトル: Defect formation and phase stability of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Cu</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mtext>ZnSnS</mml:mtext></mml:mrow><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>photovoltaic material
• 著者標目: Akihiro Nagoya; Ryoji Asahi; Roman Wahl; Georg Kresse
• 出版年月日等: 2010-03-15
• 出版年（W3CDTF）: 2010-03-15
• タイトル（掲載誌）: Physical Review B
• 巻号年月日等（掲載誌）: 81 11
• 掲載巻: 81
• 掲載号: 11
• 掲載ページ: 113202-
• 掲載年月日（W3CDTF）: 2010-03-15
• ISSN（掲載誌）: 10980121
• 出版事項（掲載誌）: American Physical Society (APS)
• 対象利用者: 一般
• DOI: 10.1103/physrevb.81.113202
• 作成日（W3CDTF）: 2010-03-15
• 著作権情報: http://link.aps.org/licenses/aps-default-license
• 関連情報（URI）: http://link.aps.org/article/10.1103/PhysRevB.81.113202; http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.113202/fulltext
• 参照: A comprehensive study on Cu2SnS3 prepared by sulfurization of Cu–Sn sputtered precursor for thin-film solar cell applications; https://cir.nii.ac.jp/crid/1360009142624341888; Influence of chemical composition on the properties of directly coevaporated Cu–Zn–Sn–S-based thin films and solar cells; https://cir.nii.ac.jp/crid/1360284924866966272; Control of composition and properties by the use of reflector wall in RF sputter deposition of Cu2ZnSnS4 thin films; https://cir.nii.ac.jp/crid/1360285707517743616; First Principles Calculations of Defect Formation in In-Free Photovoltaic Semiconductors Cu₂ZnSnS₄ and Cu₂ZnSnSe₄; https://cir.nii.ac.jp/crid/1360566396809607424; First-principles study of defect formation in the photovoltaic semiconductor Cu₂SnS₃ for comparison with Cu₂ZnSnS₄ and CuInSe₂; https://cir.nii.ac.jp/crid/1360566399843908096; Cation ratio fluctuations in Cu₂ZnSnS₄ at the 20 nm length scale investigated by analytical electron microscopy; https://cir.nii.ac.jp/crid/1360846639581522944; First-principles study of defect formation in the photovoltaic semiconductors Cu₂GeS₃and Cu₂ZnGeS₄for comparison with Cu₂SnS₃, Cu₂ZnSnS₄, and CuInSe₂; https://cir.nii.ac.jp/crid/1360847874821159808; Thermo-physical properties of Cu2ZnSnS4 single crystal; https://cir.nii.ac.jp/crid/1360848657192736384; Temperature-dependent photocarrier recombination dynamics in Cu₂ZnSnS₄ single crystals; https://cir.nii.ac.jp/crid/1360848658840476672; Grain Growth in Cu₂ZnSnS₄ Thin Films Using Sn Vapor Transport for Photovoltaic Applications; https://cir.nii.ac.jp/crid/1520291855692073216; Enhancement of Conversion Efficiency of Cu₂ZnSnS₄ Thin Film Solar Cells by Improvement of Sulfurization Conditions; https://cir.nii.ac.jp/crid/1521699230352743168
• 連携機関・データベース: 国立情報学研究所 : CiNii Research; https://cir.nii.ac.jp/
• 提供元機関・データベース: Crossref; https://www.crossref.org