金蒸着膜の内部応力および構造のX線による研究 (II)

• 資料種別: 記事
• タイトル: 金蒸着膜の内部応力および構造のX線による研究 (II)
• 著者標目: 金原 粲
• 出版年月日等: 1961
• 出版年（W3CDTF）: 1961
• タイトル（掲載誌）: 応用物理
• 巻号年月日等（掲載誌）: 30 9
• 掲載巻: 30
• 掲載号: 9
• 掲載ページ: 647-653
• 掲載年月日（W3CDTF）: 1961
• ISSN（掲載誌）: 03698009
• 出版事項（掲載誌）: The Japan Society of Applied Physics
• 対象利用者: 一般
• DOI: 10.11470/oubutsu1932.30.647; https://doi.org/10.11470/oubutsu1932.30.647
• 連携機関・データベース: 国立情報学研究所 : CiNii Research; https://cir.nii.ac.jp/
• 提供元機関・データベース: Japan Link Center; https://japanlinkcenter.org/top; CiNii Articles
• NII論文ID: 130003587686

• 要約等: Effect of annealing on the properties of thin gold films deposited <i>in vacuo</i> has been studied by X-ray diffraction method with a Norelco X-ray spectrometer. Within a temperature range of 20_??_400°C, all physical properties are found to vary smoothly and monotonously by annealing. No special temperature corresponding to recrystallization temperature in bulk gold is found. As the annealing temperature is raised, the internal stress of film calculated from the strain in crystallites in the film decreases, the diffraction intensity increases, and the line breadth is reduced.<br> From these results and those obtained in the preceding papers, the following conclusions are derived for the structure of “thin gold films deposited <i>in vacuo</i> (10^-5 mmHg) on glass substrates at room temperatures”, and for the origin of the internal stress in such films.<br> 1. The film consists of two parts, crystalline and amorphous. The mean size of crystallites is 100_??_500Å, and in most crystallites, (111) planes are parallel to the substrate. When the film is very thin, the film is of the so-called “island” structure.<br> 2. Very small crystallites are supposed to be in liquid state.<br> 3. The structure of the film is influenced by residual gases present in the evaporation chamber.<br> 4. If the film is below 1000Å in thickness, the thinner the film, the smaller the mean crystallite size is.<br> 5. The mean crystallite size reaches its maximum at a film thickness of about 1000Å. In this region, the rate of crystal growth due to annealing is minimum. Such a film shall be named the “fundamental layer”.
• DOI: 10.11470/oubutsu1932.30.647
• オンライン閲覧公開範囲: インターネット公開
• 連携機関・データベース: 科学技術振興機構 : J-STAGE; http://www.jstage.jst.go.jp