Si基板上半極性窒化物半導体の結晶成長(特集次世代素子のための窒化物結晶成長新機軸)

Journal name: 日本結晶成長学会誌 = Journal of the Japanese Association for Crystal Growth 38(4):2011

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Material Type: 記事
Title: Si基板上半極性窒化物半導体の結晶成長
Author/Editor: 本田善央
Series Title: 特集次世代素子のための窒化物結晶成長新機軸
Author Heading: 本田善央
Alternative Title: Crystal Growth of Semipolar GaN on Si Substrate
Periodical title: 日本結晶成長学会誌 = Journal of the Japanese Association for Crystal Growth
No. or year of volume/issue: 38(4):2011
Volume: 38
Issue: 4
Pages: 241-248
Publication date of volume/issue (W3CDTF): 2011
ISSN (Periodical Title): 0385-6275
ISSN-L (Periodical Title): 0385-6275
Publication (Periodical Title): 大阪 : 日本結晶成長学会
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z15-339
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 023506639
http://id.ndl.go.jp/bib/023506639
Bibliographic Record Category (NDL): 632