Bipolar Resistive Switching Behavior of a Pt/NiO/TiN Device for Nonvolatile Memory Applications
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- Material Type
- 記事
- Title
- Author/Editor
- Tae-Geun SeongMi-Ri JoungJong-Woo Sun 他
- Author Heading
- Periodical title
- Japanese journal of applied physics : JJAP
- No. or year of volume/issue
- 51(4)(1):2012.4
- Volume
- 51
- Issue
- 4
- Sequential issue number
- 1
- Pages
- 041102-1-5