n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor Modeling in Forward Body Bias Condition for Low Voltage Complementary Metal-Oxide-Semiconductor Circuits Design

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Material Type: 記事
Title: n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor Modeling in Forward Body Bias Condition for Low Voltage Complementary Metal-Oxide-Semiconductor Circuits Design
Author/Editor: Hitoshi Aoki
Akira Matsuzawa
Author Heading: Hitoshi Aoki
Akira Matsuzawa
Periodical title: Japanese journal of applied physics : JJAP
No. or year of volume/issue: 51(4)(1):2012.4
Volume: 51
Issue: 4
Sequential issue number: 1
Pages: 044301-1-4
Publication date of volume/issue (W3CDTF): 2012-04
ISSN (Periodical Title): 0021-4922
ISSN-L (Periodical Title): 0021-4922
Publication (Periodical Title): Tokyo : The Japan Society of Applied Physics
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z53-A375
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 023587942
http://id.ndl.go.jp/bib/023587942
Bibliographic Record Category (NDL): 632