Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance (Special Issue : Solid State Devices and Materials (2))

Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance

(Special Issue : Solid State Devices and Materials (2))

Call No. (NDL): Z53-A375
Bibliographic ID of National Diet Library: 023588355

Material type: 記事

Author: Qi Zhouほか

Publisher: Tokyo : The Japan Society of Applied Physics

Publication date: 2012-04

Material Format: Paper

Journal name: Japanese journal of applied physics : JJAP 51(4)(2):2012.4

Publication Page: p.04DF02-1-4

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Paper

Material Type: 記事
Title: Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance
Author/Editor: Qi Zhou
Hongwei Chen
Chunhua Zhou 他
Series Title: Special Issue : Solid State Devices and Materials (2)
Author Heading: Qi Zhou
Hongwei Chen
Chunhua Zhou
Periodical title: Japanese journal of applied physics : JJAP
No. or year of volume/issue: 51(4)(2):2012.4
Volume: 51
Issue: 4
Sequential issue number: 2
Pages: 04DF02-1-4
Publication date of volume/issue (W3CDTF): 2012-04
ISSN (Periodical Title): 0021-4922
ISSN-L (Periodical Title): 0021-4922
Publication (Periodical Title): Tokyo : The Japan Society of Applied Physics
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z53-A375
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 023588355
http://id.ndl.go.jp/bib/023588355
Bibliographic Record Category (NDL): 632