SiGeミキシング誘起溶融成長によるGOI(Ge on Insulator)の形成 : 人工単結晶への道 (ナノテクノロジー新時代における独創的モノ作りと協調的進化)
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- Material Type
- 記事
- Author/Editor
- 宮尾 正信佐道 泰造都甲 薫 他
- Series Title
- Alternative Title
- SiGe-mixing-triggered rapid-melting growth for Ge-on-insulator formation : A road to artificial crystal
- Periodical title
- 応用物理
- No. or year of volume/issue
- 81(5):2012.5
- Volume
- 81
- Issue
- 5