窒化物半導体のハイド...

窒化物半導体のハイドライド気相成長技術の現状と課題 (省エネ創エネを牽引(けんいん)する窒化物ワイドギャップ半導体)

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窒化物半導体のハイドライド気相成長技術の現状と課題(省エネ創エネを牽引(けんいん)する窒化物ワイドギャップ半導体)

Call No. (NDL)
Z15-243
Bibliographic ID of National Diet Library
023822555
Material type
記事
Author
纐纈 明伯
Publisher
東京 : 応用物理学会
Publication date
2012-06
Material Format
Paper
Journal name
応用物理 81(6):2012.6
Publication Page
p.471-478
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Paper Digital

Material Type
記事
Author/Editor
纐纈 明伯
Author Heading
Alternative Title
Current status and future of the hydride vapor phase epitaxy of nitride semiconductors
Periodical title
応用物理
No. or year of volume/issue
81(6):2012.6
Volume
81
Issue
6