InAs/InGaAs量子ドット構造を用いた広帯域量子ドット光ゲインデバイスの開発 (レーザ・量子エレクトロニクス)

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InAs/InGaAs量子ドット構造を用いた広帯域量子ドット光ゲインデバイスの開発

(レーザ・量子エレクトロニクス)

Call No. (NDL)
Z16-940
Bibliographic ID of National Diet Library
023938542
Material type
記事
Author
吉岡 佑毅ほか
Publisher
東京 : 電子情報通信学会
Publication date
2012-08
Material Format
Paper
Journal name
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 112(184):2012.8.23・24
Publication Page
p.51-56
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Paper

Material Type
記事
Author/Editor
吉岡 佑毅
山本 直克
赤羽 浩一 他
Alternative Title
Development of broadband quantum-dot optical gain device with InAs/InGaAs quantum-dot structure
Periodical title
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue
112(184):2012.8.23・24
Volume
112
Issue
184