パワー半導体IGBTの深い活性化のためのハイブリッドレーザアニール装置の開発

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Material Type: 記事
Title: パワー半導体IGBTの深い活性化のためのハイブリッドレーザアニール装置の開発
Author/Editor: 清野俊明
山口芳広
小林直之他
Author Heading: 清野俊明
山口芳広
小林直之
Alternative Title: Development of Hybrid Laser Annealing System for Deep Activation of Power Semiconductor IGBTs
Periodical title: 日本製鋼所技報
No. or year of volume/issue: (63):2012
Issue: 63
Pages: 102-107
Publication date of volume/issue (W3CDTF): 2012
ISSN (Periodical Title): 0369-562X
ISSN-L (Periodical Title): 0369-562X
Publication (Periodical Title): 東京 : 日本製鋼所
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZP42
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z17-317
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 024022758
http://id.ndl.go.jp/bib/024022758
Bibliographic Record Category (NDL): 632