Investigation of the Low-Frequency Noise Behavior and Its Correlation with the Subgap Density of States and Bias-Induced Instabilities in Amorphous InGaZnO Thin-Film Transistors with Various Oxygen Flow Rates

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Investigation of the Low-Frequency Noise Behavior and Its Correlation with the Subgap Density of States and Bias-Induced Instabilities in Amorphous InGaZnO Thin-Film Transistors with Various Oxygen Flow Rates

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
024025832
Material type
記事
Author
Chan-Yong Jeongほか
Publisher
Tokyo : The Japan Society of Applied Physics
Publication date
2012-10
Material Format
Paper
Journal name
Japanese journal of applied physics : JJAP 51(10)(1):2012.10
Publication Page
p.100206-1-3
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Paper

Material Type
記事
Author/Editor
Chan-Yong Jeong
Ick-Joon Park
In-Tak Cho 他
Periodical title
Japanese journal of applied physics : JJAP
No. or year of volume/issue
51(10)(1):2012.10
Volume
51
Issue
10
Sequential issue number
1
Pages
100206-1-3