減圧CVD法によるグラフェン成長制御 (有機エレクトロニクス)

減圧CVD法によるグラフェン成長制御

(有機エレクトロニクス)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 112(410):2013.1.24

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Material Type: 記事
Title: 減圧CVD法によるグラフェン成長制御
Author/Editor: 前坂考哉
佐藤英樹
三宅秀人他
Series Title: 有機エレクトロニクス
Author Heading: 前坂考哉
佐藤英樹
三宅秀人
Alternative Title: Growth of graphene by low pressure chemical vapor deposition
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 112(410):2013.1.24
Volume: 112
Issue: 410
Pages: 31-35
Publication date of volume/issue (W3CDTF): 2013-01-24
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: グラフェン
低温成長
減圧化学気相成長(LP-CVD)法
Graphene
Low temperature growth
Low-pressure chemical vapor deposition (LP-CVD)
NDLC: ZN33
Target Audience: 一般
Report No. (Article): OME2012-89
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 024261783
http://id.ndl.go.jp/bib/024261783
Bibliographic Record Category (NDL): 632