Physical Mechanism Determining Ge p- and n-MOSFETs Mobility in High Ns Region and Mobility Improvement by Atomically Flat GeOx/Ge Interfaces (シリコン材料・デバイス・IEDM特集(先端CMOSデバイス・プロセス技術))

Physical Mechanism Determining Ge p- and n-MOSFETs Mobility in High Ns Region and Mobility Improvement by Atomically Flat GeOx/Ge Interfaces

(シリコン材料・デバイス・IEDM特集(先端CMOSデバイス・プロセス技術))

Call No. (NDL): Z16-940
Bibliographic ID of National Diet Library: 024262867

Material type: 記事

Author: 張睿ほか

Publisher: 東京 : 電子情報通信学会

Publication date: 2013-01-30

Material Format: Paper

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 112(421):2013.1.30

Publication Page: p.9-13

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Paper

Material Type: 記事
Title: Physical Mechanism Determining Ge p- and n-MOSFETs Mobility in High Ns Region and Mobility Improvement by Atomically Flat GeOx/Ge Interfaces
Author/Editor: 張睿
黄博勤
林汝静他
Series Title: シリコン材料・デバイス・IEDM特集(先端CMOSデバイス・プロセス技術)
Author Heading: 張睿
黄博勤
林汝静
Alternative Title: Ge p- and n-MOSFETの高電界領域での移動度劣化機構の解析と原子層平坦GeOx/Ge界面による移動度の向上 Ge p- and n-MOSFET ノコウデンカイリョウイキデノイドウドレッカキコウノカイセキトゲンシソウヘイタン GeOx/Ge カイメンニヨルイドウドノコウジョウ
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 112(421):2013.1.30
Volume: 112
Issue: 421
Pages: 9-13
Publication date of volume/issue (W3CDTF): 2013-01-30
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: ZN33
Target Audience: 一般
Report No. (Article): SDM2012-140
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 024262867
http://id.ndl.go.jp/bib/024262867
Bibliographic Record Category (NDL): 632