GaNパワーデバイスのスイッチング特性における深い準位の影響 (電子デバイス)

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GaNパワーデバイスのスイッチング特性における深い準位の影響

(電子デバイス)

Call No. (NDL)
Z16-940
Bibliographic ID of National Diet Library
024262895
Material type
記事
Author
田中 健一郎ほか
Publisher
東京 : 電子情報通信学会
Publication date
2013-01
Material Format
Paper
Journal name
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 112(380):2013.1.17・18
Publication Page
p.63-68
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Paper

Material Type
記事
Author/Editor
田中 健一郎
石田 昌宏
上田 哲三 他
Series Title
Alternative Title
Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs
Periodical title
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue
112(380):2013.1.17・18
Volume
112
Issue
380