SiCNゲート絶縁膜を用いたAlGaN/GaN MISゲートHEMT (電子デバイス)

SiCNゲート絶縁膜を用いたAlGaN/GaN MISゲートHEMT

(電子デバイス)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 112(380):2013.1.17・18

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Material Type: 記事
Title: SiCNゲート絶縁膜を用いたAlGaN/GaN MISゲートHEMT
Author/Editor: 小林健悟
吉田智洋
尾辻泰一他
Series Title: 電子デバイス
Author Heading: 小林健悟
吉田智洋
尾辻泰一
Alternative Title: AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 112(380):2013.1.17・18
Volume: 112
Issue: 380
Pages: 75-78
Publication date of volume/issue (W3CDTF): 2013-01
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: GaN
AlGaN
SiCN
MISゲート
高電子移動度トランジスタ(HEMT)
水素アニール
MIS-Gate
high electron mobility transistor (HEMT)
hydrogen annealing
NDLC: ZN33
Target Audience: 一般
Report No. (Article): ED2012-126
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 024262989
http://id.ndl.go.jp/bib/024262989
Bibliographic Record Category (NDL): 632