イオン注入による欠陥...

イオン注入による欠陥準位導入によってシリコン太陽電池の効率は改善するか (シリコン材料・デバイス)

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イオン注入による欠陥準位導入によってシリコン太陽電池の効率は改善するか

(シリコン材料・デバイス)

Call No. (NDL)
Z16-940
Bibliographic ID of National Diet Library
024342165
Material type
記事
Author
榊原 宏武ほか
Publisher
東京 : 電子情報通信学会
Publication date
2013-02
Material Format
Paper
Journal name
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 112(446):2013.2.27・28
Publication Page
p.19-24
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Paper

Material Type
記事
Author/Editor
榊原 宏武
和田 耕司
加藤 正史 他
Alternative Title
Possibility of efficiency improvement of silicon solar cells due to defect-level introduction by ion implantation
Periodical title
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue
112(446):2013.2.27・28
Volume
112
Issue
446