外部電圧印加に伴うキャリア注入による極薄SOI膜のゼーベック係数変化 (電子デバイス)

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外部電圧印加に伴うキャリア注入による極薄SOI膜のゼーベック係数変化

(電子デバイス)

Call No. (NDL)
Z16-940
Bibliographic ID of National Diet Library
024342583
Material type
記事
Author
池田 浩也ほか
Publisher
東京 : 電子情報通信学会
Publication date
2013-02
Material Format
Paper
Journal name
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 112(445):2013.2.27・28
Publication Page
p.7-11
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Paper

Material Type
記事
Author/Editor
池田 浩也
鈴木 悠平
三輪 一聡 他
Series Title
Alternative Title
Variation of Seebeck coefficient of Si-on-insulator layer induced by bias-injected carriers
Periodical title
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue
112(445):2013.2.27・28
Volume
112
Issue
445