Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology (Special Issue : Solid State Devices and Materials)

Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology

(Special Issue : Solid State Devices and Materials)

Call No. (NDL): Z53-A375
Bibliographic ID of National Diet Library: 024437042

Material type: 記事

Author: Anabela Velosoほか

Publisher: Tokyo : The Japan Society of Applied Physics

Publication date: 2013-04

Material Format: Paper

Journal name: Japanese journal of applied physics : JJAP 52(4)(2):2013.4

Publication Page: p.04CA02-1-7

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Paper

Material Type: 記事
Title: Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology
Author/Editor: Anabela Veloso
Soon Aik Chew
Yuichi Higuchi 他
Series Title: Special Issue : Solid State Devices and Materials
Author Heading: Anabela Veloso
Soon Aik Chew
Yuichi Higuchi
Periodical title: Japanese journal of applied physics : JJAP
No. or year of volume/issue: 52(4)(2):2013.4
Volume: 52
Issue: 4
Sequential issue number: 2
Pages: 04CA02-1-7
Publication date of volume/issue (W3CDTF): 2013-04
ISSN (Periodical Title): 0021-4922
ISSN-L (Periodical Title): 0021-4922
Publication (Periodical Title): Tokyo : The Japan Society of Applied Physics
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z53-A375
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 024437042
http://id.ndl.go.jp/bib/024437042
Bibliographic Record Category (NDL): 632