Formation of laterally-graded Ge based hetero-structure (シリコン材料・デバイス)

Formation of laterally-graded Ge based hetero-structure

(シリコン材料・デバイス)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 113(17):2013.4.25・26

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Material Type: 記事
Title: Formation of laterally-graded Ge based hetero-structure
Author/Editor: 松村亮
佐道泰造
宮尾正信
Series Title: シリコン材料・デバイス
Author Heading: 松村亮
佐道泰造
宮尾正信
Alternative Title: 溶融法による横方向組成傾斜型Ge系ヘテロ構造の形成ヨウユウホウニヨルヨコホウコウソセイケイシャガタ Geケイヘテロコウゾウノケイセイ
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 113(17):2013.4.25・26
Volume: 113
Issue: 17
Pages: 17-23
Publication date of volume/issue (W3CDTF): 2013-04
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: eng
Subject Heading: SiGe on insulator
溶融成長法
Si偏析現象
横方向組成傾斜
Scheil式
rapid-melting growth
Si segregation
laterally graded profile
Scheil equation
NDLC: ZN33
Target Audience: 一般
Report No. (Article): SDM2013-5
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 024466954
http://id.ndl.go.jp/bib/024466954
Bibliographic Record Category (NDL): 632